期刊文献+

脉冲激光烧蚀凹腔的实验分析及数值模拟 被引量:9

Experiment Study and Numerical Simulation of Pulsed Laser Ablation Crater
原文传递
导出
摘要 为分析脉冲个数对烧蚀凹腔形貌的影响,利用纳秒脉冲激光在灰铸铁表面加工微凹腔造型,分析了凹腔相貌与脉冲个数的关系。在低于10个脉冲的作用下,凹腔深度随脉冲数的增加近似呈线性增长,之后,凹腔深度随脉冲数增加的增长趋势逐渐变缓,凹腔直径随着脉冲个数的增加会有所增大,但增大幅度很小。当脉冲个数大于15以后,由于凹腔较深,熔融的金属难以喷溅出凹腔,导致加工质量较差。凹腔直径随着脉冲个数的增加会有所增大,但增大幅度很小。对加工过程的温度场进行数值模拟,得到了烧蚀过程中温度的变化曲线和凹腔相貌的变化规律。将模拟得到的凹腔深度与实验结果相比较,两者基本吻合,验证了模型的合理性。 In order to study the influence of the pulse number on the topography of ablation craters. Craters were processed on the surface of the cast iron by nanosecond pulse laser. The relationship between the depth of the crater and the number of the pulses was analyzed. The crater depth almost linearly increases when the pulse number is under 10. Then the depth growth rate becomes slower and slower. When the pulse count is above 15, the quality of the crater is poor, because of the crater is deeper, and the molten metal cannot splash out of the crater. The increase of crater diameter will be slower with the pulse number. In order to get the temperature distribution and the topography of craters, the temperature field of the ablation was simulated. The simulation results are consistent with the measurement results, which demonstrate the rationality of the model.
出处 《中国激光》 EI CAS CSCD 北大核心 2009年第1期219-223,共5页 Chinese Journal of Lasers
基金 国家自然科学基金(50475122)资助项目
关键词 激光技术 脉冲激光烧蚀 数值模拟 凹腔 铸铁 laser technique pulse laser ablation numerical simulation crater cast iron
  • 相关文献

参考文献10

  • 1Andriy Kovalchenko, Ogelayo Ajayi, All Erdemir et al.. The effect of laser surface texturing on transitions in lubrication regimes during unidirectional sliding contact [J]. rribology International, 2005, 38 : 219-225.
  • 2U. Popp, U. Engel. Microtexturing of cold forging tools- influence on tool life [J]. J. Engineering ManuJacture, 2006, 220(Part B) :27-33.
  • 3Izhak Etsion. State of the art in laser surface texturing [J]. J. Tribology, 2005, 127: 248-252.
  • 4Kai Dou, Edward T. Knobbe, Robert L. Parkhill et al.. Surface texturing of aluminum alloy 2024 T3 via femto and nanosecond pulse excimer laser irradiation [-J]. IEEE J. Sel. Top. Quantum Electron., 2000, 6(4):689-695.
  • 5W. Zhang, Y. L. Yao, K. Chen. Modelling and analysis of UV laser micromachining of copper [J]. Int J. Adv. Manuf. Technol. , 2001, 18:323-331.
  • 6梁建国,倪晓昌,杨丽,王清月.超短激光脉冲烧蚀铜材料的数值模拟[J].中国激光,2005,32(9):1291-1294. 被引量:13
  • 7陈洪新,贾天卿,黄敏,赵福利,许宁生,徐至展.飞秒激光的波长对SiC材料烧蚀的影响[J].光学学报,2006,26(3):467-470. 被引量:23
  • 8V. Oliveira, R. Vilar. Finite element simulation of pulsed laser ablation of titanium carbide [J]. Appl. Surf. Sci. , 2007, 253 (19) :7810-7814.
  • 9符永宏,华希俊,陶根宁,严必峰,袁润.摩擦副表面激光微造型工艺试验研究[J].应用激光,2006,26(5):295-298. 被引量:12
  • 10万大平,胡德金,刘红斌,蔡兰蓉.脉冲激光毛化加工的计算机流体动力学数值模拟[J].中国激光,2007,34(7):1004-1008. 被引量:10

二级参考文献36

  • 1席明哲,虞钢.连续移动三维瞬态激光熔池温度场数值模拟[J].中国激光,2004,31(12):1527-1532. 被引量:75
  • 2吴祖斌,王专,廖春艳,韩英魁,曹士英,张志刚,王清月,邵建达.钛宝石激光器中用优化Gires-Tournois镜产生15 fs脉冲[J].光学学报,2005,25(2):216-219. 被引量:6
  • 3Anita Lloyd Spetz, Peter Tobias, Amir Baranzahi at al.. Current status of silicon carbide based high-temperature gas sensors[J].IEEE Trans. Electron Device, 1999, 46(3): 561-566
  • 4Jia T Q, Xu Z Z, Li X X et al.. Microscopic mechanisms of ablation and mieromachining of dielectrics by using femtosecond lasers[J]. Appl. Phys. Lett., 2003, 82(24): 4382-4384
  • 5T. Q. Jia, Z. Z. Xu, X. X. Li et al.. Mechanisms in fs-laser ablation in fused silica[J]. J. Appl. Phys., 2004, 95(9):5166-5171
  • 6Guanghua Cheng, Yishan Wang, J. D. White et al..Demonstration of high-clensity three-dimensional storage in fused silica by femtoseeond laser pulses[J]. J. App. Phys. , 2003, 94(3): 1304-1307
  • 7Yuanyuan Dong, Pal Molian. Femtosecond pulsed laser ablation of 3C-SiC thin film on silicon[J]. Appl. Phys. A, 2003, 77:839-846
  • 8Yuanyuan Dong, Pal Molian. Coulomb explosion-induced formation of highly oriented nanoparticles on thin films of 3C-SiC by the femtoseeond pulsed laser[J]. Appl. Phys. Lett. , 2004,84(1): 10-12
  • 9D. M. Simanovskii, H. A. Schwettman, H. Lee at al..Midinfrared optical breakdown in transparent dielectrics [J].Phys. Rev. Lett., 2003, 91(10): 107601-1-10760-4
  • 10Harald O. Jeschke, Martin E. Garcia, Matthias Lenzner at al..Laser ablation thresholds of silicon for different pulse durations: theory and experiment[J]. Appl. Surf. Sci. , 2002, 197-198:839-844

共引文献54

同被引文献75

引证文献9

二级引证文献66

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部