硅基波导与GeSi/Si超晶格探测器之间光电集成器件的研制

Fabrication of Intergrated GeSi/Si Superlattic PIN Photodetector with Waveguide

用分子束外延法将ＧｅＳｉ／Ｓｉ超晶格结构生长在ｎ＋／ｎＳｉ材料上，先后用反应离子刻蚀法形成探测器波导和硅脊波导，经适当工艺实现硅波导与ＰＩＮ探测器之间的光电集成，５Ｖ偏压下ＰＩＮ探测器的最小暗电流为０．８μＡ，最大光响应电流为２．７μＡ，最大总量子效率为１４％，工作波长为λ＝１．３μｍ。

The GeSi/Si superlattices structure is grown on the n +/n - Si wafer by MBE method. The detector and the Si rib waveguides are formed by reactive ion etching. The integration of Si waveguide and GeSi/Si superlattices PIN photodetector is fabricated throuth the suitable process. The minimum dark current of PIN detector is 0.8 μA and the maximum photocurrent is 2.7 μA at 5 V reverse bias. The maximum overall quantum efficiency of photodetector of 14.2% was obtained. The working wavelenth λ=1.3 μm.