摘要
电子回旋共振等离子分解CH19Si2N-N2混合气体,采用溅射共混、气相液相共混沉积技术,制备四元素SiCNB膜,由XPS分析了膜的成份及生成的键结构,发现溅射共混、气液共混沉积过程中聚合成了C-N、C-B、N-B、Si-C化合物。
The paper report formation of four elements SiCNB film by electron cyclotron resonance plasma decomposed CH 19 Si 2N-N 2hybrid gas assisted sputter Co-mixing and gas-liquid phase Co-mixing technology. composition and chemical bond of film were analysized by XPS. Expriment showed that formation of Si-c, C-B, C-N, B-N vond as well as Bc 2N structure in the films at sputter Co-mixing and gas-liquid phase Co-miximg.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
1998年第2期235-239,共5页
Journal of Atomic and Molecular Physics
基金
国防预研基金