摘要
使用波长为808和658nm的半导体激光器和染料激光器作为激发源,测量了Er3+:YVO4晶体的波长在553和410nm附近的上转换荧光.对激发过程的分析表明,贡献于上转换荧光的主要激发机制为激发态吸收.在不同浓度下对上转换荧光的寿命测量结果显示,随Er3+浓度的提高,553nm绿光的荧光寿命随浓度的增加而减小,但410nm的荧光寿命随Er3+浓度无明显变化.结合绿光强度随掺杂浓度增加而减小的结果,认为在所测浓度范围内,绿光发射具有明显的浓度猝灭效应,并且绿光上能级的布居主要来自于蓝光上能级向绿光上能级的无辐射弛豫.
Abstract Upconversion fluorescence near 553 and 410nm was detected when the Er 3+ doped yttrium vanadate (Er 3+ ∶YVO 4) crystal was excited with a 808nm diode laser and a 658nm dye laser. Analysis of excitation mechanism shows that excited state absorption dominantly contributes to the upconversion emissions. Measurement of lifetimes for different Er 3+ concentration indicates that the lifetime of 553nm emission decreases with increasing Er 3+ concentration, but no considerable changes of that of 410nm emission have been observed. With the consideration of the fact that the intensity of 553nm band declines with increasing Er 3+ concentration, we argue that in the concentration range measured there is an appreciable concentration quenching in the 553nm emission, and a dominant population channel of its upper state ( 4 S 3/2 ) is the nonradiative relaxation from the upper state ( 2H 9/2 ) of the 410nm band.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第5期747-755,共9页
Acta Physica Sinica