通过纳米硅中量子点的共振隧穿

RESONANT TUNNELING THROUGH NANO SIZE QUANTUM DOT EMBEDDED IN AMORPHOUS TISSUES *

用纳米硅（ｎｃＳｉ∶Ｈ）薄膜制成了隧道二极管，并在其ＩＶ曲线上发现了不连续的量子化台阶．二极管的ＩＶ曲线可分成二部分：（１）０—７Ｖ，电流随外加电压增大而增大；（２）７—９Ｖ，电流随外加电压急剧增大并出现三个量子化台阶．量子化台阶的出现直接与纳米硅中的晶粒有关，根据ｎｃＳｉ∶Ｈ的独特结构，对载流子的传导通道进行了讨论；用通过ｎｃＳｉ∶Ｈ中量子点的共振隧穿对ＩＶ曲线进行了初步解释．

Abstract The diode consisting of nano silicon quantum dots embedded in an amorphous silicon matrix was fabricated and the discontinuous staircases on its I V curves were observed.There were two distinct regimes on I V curves of diode:(i) the sequential tunneling regime,where current increased monotonously with increasing negative bias;(ii) the resonant tunneling regime,where the current increased dramatically with increasing negative bias,and three quantum staircases appeared.It was found that the steps was related to the grains of the deposited film.The qualitative explanation of this physical phenomenon was proposed in terms of the material structural characteristics.