隧道二极管用锗单晶制备的温场设计

Temperature Profile Design for Ga Heavily-doped Ge Single Crystal Growth

通过设计合适的温场，解决了重掺单晶生长过程中的组分过冷和位错密度高的问题，获得了高掺杂浓度高迁移率的无位错单晶。

Proper temperature profile was designed to solve the problems of heavilydoped Germanium single crystal growth. High temperature gradient in the melt near the solid-liquid interface was required to prevent constitution supercooling, and lower temperature gradient in the crystal was obtained at the same time to decrease dislocations. High Hall mobility and freedislocation single crystal were obtained.