摘要
通过1200℃、15h急冷热处理实验,研究了硅中位错对高温塑性形变的影响及热处理过程中位错密度的变化。实验结果表明,硅中原有位错密度越大或热处理急冷温度越高,均使塑性形变更加严重。位错密度为04~2×103cm-2的硅片的弯曲度变化是无位错硅片的3倍多,1200℃急冷产生的形变量是770℃急冷的4倍。无位错硅片在高温热处理中会产生大量位错,且急冷温度越高,产生的位错越多。热处理中区熔硅片容易在边缘产生位错星形结构。
The effect of dislocation in silicon wafer on the elevated plastic deformation and the change of dislocation density during heat treatment were studied by heat treatment test for silican wafer at 1200℃ for 1.5 h. The results show that the larger the initial dislocation density in the silicon wafer and the higher the rapid cooling temperature during heat treatment, the more serious the plastic diformation of silicon wafer. The change of bow of silicon wafer coled at 1200℃ is 4 times of that at 770℃, and the change of bow of silicon wafer with dislocation density of (0.4~2)×103 cm-2 is 3 times of treatment of dislocationfree silicon wafer. A lot of dislocation is generated in dislocationfree silicon wafer during heat treatment, and the higher the rapid cooling temperature, the more the dislocation generated. The dislocation star structure is grnerated at the edge of FZSi during heat treatment.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第3期208-211,共4页
Chinese Journal of Rare Metals
基金
硅材料国家重点实验室基金
关键词
硅片
塑性形变
位错
热处理
Silicon wafer, Plastic deformation, Dislocation, Heat treatment