多次掩模湿法腐蚀硅微加工过程的蒙特卡罗仿真

Monte Carlo Simulation of Multiple Masking Processes for Anisotropic Wet Etching

探讨利用蒙特卡罗(Monte Carlo,MC)法模拟硅微加工各向异性湿法腐蚀的仿真,实现连续多次掩模,多步硅微加工工艺过程的仿真。介绍MC法的使用特点及其在湿法腐蚀硅微加工中的应用,仿真使用腐蚀概率方程确定表面原子适当的MC转移概率,模拟方法支持氧化硅和氮化硅掩模层作用下的各向异性腐蚀加工和多次掩模的传递过程。编制的仿真程序通过模拟一个原子力显微镜探针阵列多掩模连续6步工艺的硅微加工过程验证了MC法的正确性。

The Monte Carlo （MC） method is explored to simulate the composed silicon fabrication processes of anisotropic wet etching. The multi-step etching processes with multiple masking capabilities are implemented in the simulation program. The removal probability function is applied to calculating the parameters of removal probabilities in the MC calculation. This approach can simulate the effects of silicon oxide and silicon nitride layers in wet anisotropic etching and the transformation of the multi-mask patterns. The simulation of the six steps processes for atomic force microscope （AFM） probe array is carried out to verify this MC method.