氧氮磷杂质对硅片高温形变的影响

THE EFFECT OF NITROGEN, OXYGEN AND PHOSPHORUS ON ELEVATEDTEMPERATURE DEFORMATION OF SILICON WAFER

通过模拟集成电路高温工艺的１２００℃，１．５ｈ后急冷热处理，研究了硅中氧、氮、磷３种杂质对硅片高温工艺过程中塑性形变的影响．实验结果表明，普通氩气氛下直拉单晶硅（ＡＣＺＳｉ）高温弯曲度变化只是含氧很少的区熔硅（ＦＺＳｉ）的１／３左右．在含氮气氛下直拉硅（ＮＣＺＳｉ）中，氮含量为４．５×１０１５ｃｍ－３的单晶尾部高温热处理弯曲度约是氮含量很小的单晶头部的１／３，重掺磷硅片热处理形变比普通硅片大得多．

おhe effects of nitrogen, oxygen and phosphorus in silicon on the deformation of silicon wafer cooled rapidly after heat treating at 1200 ℃ for 1.5 h were studied by simulation experiment of IC high temperature process. The results showed that elevated bow change of ACZSi was only 13of that of FZSi; the elevated bow change of head of NCZSi crystal which contains fewer N was 3 times of that of tip of NCZSi containing N 4.5×1015 cm-3. The elevated deformation of silicon wafer heavily doped with P was larger than that of ordinary silicon wafer.