期刊文献+

Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass 被引量:1

Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass
下载PDF
导出
摘要 Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail. Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第1期9-15,共7页 中国物理B(英文版)
基金 Project supported by the National Basic Research Program of China (Grant No 2003CB314901) the National Natural Science Foundation of China (Grant No 60644004) the High School Innovation and Introducing Talent Project of China (B07005)
关键词 quantum dot STRAIN quantum ring and electronic structure quantum dot, strain, quantum ring and electronic structure
  • 相关文献

参考文献24

  • 1Masse N F, Homeyer E, Marko I P, Adams A R and Loualiche 2007 Appl. Phys. Lett. 91 131113
  • 2Jolley G, Fu L, Tan H H and Jagadish C 2007 Appl. Phys. Lett. 91 173505
  • 3Sugawara M, Ebe H, Hatori N, Ishida M, Arakawa Y, Akiyama T, Otsubo K and Nakata Y 2004 Phys. Rev. B 69 235332
  • 4Luis G G V, Dias D S, Jose M, Villas B and Sergio E U 2007 Phys. Rev. B 76 155306
  • 5Takuma Okunishi, Yusuke Ohtsuka, Masakazu Muraguchi and Kyozaburo Takeda 2007 Phys. Rev. B 75 245314
  • 6Yu L W, Chen K J, Song J, Xu J, Li W, Li X F, Wang J M and Huang X F 2007 Phys. Rev. Lett. 98 166102
  • 7Michael Sztucki and Till Hartmut Metger 2006 J. Appl. Phys. 99 033519
  • 8Kratzer P and Liu Q K K 2006 Phys. Rev. B 73 205347
  • 9Li S S, Xia J B, Yuan Z L and Xu Z Y 1996 Phys. Rev. B 54 11575
  • 10Mathiieu luisier, Andreas Schenk, Wolfgang Fichtner and Gerhard Klimeck 2006 Phys. Rev. B 74 205323

同被引文献2

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部