摘要
Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.
Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.
基金
Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200)
the West Light Plan of China (Grant No 2005ZD01)
the Xi’an Applied Materials Innovation Fund of China (Grant No XA-AM-200613)
