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ZnO薄膜中缓冲层厚度的研究

Research on the Thickness of the Buffer Layer in ZnO Thin Films
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摘要 采用溶胶-凝胶法制备ZnO缓冲层,并在其上沉积ZnO薄膜。研究了匀胶的膜厚控制公式,达到对膜厚的控制。采用X射线衍射仪和原子力显微镜分析了缓冲层厚度对ZnO薄膜结晶质量和表面形貌的影响规律。 Sol-Gel for the buffer layer is introduced, and ZnO thin films were deposited on the buffer layer. By the research on the formula of the layer thickness, the control of layer thickness can be achieved. The crystalline quality and morphology of ZnO thin film had been systematically investigated by means of X-Ray Diffraction(XRD) and Atomic Force Microscopy(AFM).
出处 《科学技术与工程》 2009年第3期591-595,共5页 Science Technology and Engineering
关键词 ZNO薄膜 缓冲层 膜厚控制 XRD衍射图 AFM图 ZnO film buffer layer control of layer thickness XRD AFM
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参考文献2

  • 1F. K. Shan,Z. F. Liu,G. X. Liu,W. J. Lee,G. H. Lee,I. S. Kim,B. C. Shin,Y. S. Yu. Studies of ZnO Thin Films On Sapphire (0001) Substrates Deposited by Pulsed Laser Deposition[J] 2004,Journal of Electroceramics(1-3):189~194
  • 2A. C. Rastogi,S. B. Desu,P. Bhattacharya,R. S. Katiyar. Effect of Strain Gradation on Luminescence and Electronic Properties of Pulsed Laser Deposited Zinc Oxide Thin Films[J] 2004,Journal of Electroceramics(1-3):345~352

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