Alq_3和CdSeS量子点掺杂体系的载流子输运性质的研究

Charge-carrier transport properties of blend film of Alq_3 and CdSeS quantum dot

利用飞行时间法(time-of-flight)测定了有机小分子发光材料8-羟基喹啉铝(Alq3)与CdSeS量子点掺杂体系的载流子迁移率.研究了Alq3和CdSeS混合薄膜的载流子迁移率与外加电场强度和量子点浓度的变化关系.研究结果表明,CdSeS量子点的掺杂浓度的增加会引起薄膜样品位置无序的增加.除此之外,Alq3和CdSeS量子点界面之间的电荷转移作用,以及在量子点之间进行跳跃传输的电子数量都会改变样品的载流子迁移率.

The charge-carrier mobility of the blend films consisting of organic small molecule and quantum dots（QDs）,Alq3 and CdSeS,are studied by time-of-flight（TOF） technique.The dependence of charge-carrier mobility in the blend films on electric filed and QD concentration is measured.The results show that the positional disorder in the blend films are increased with the increase of QD concentration.Moreover,the charge transport mechanisms between Alq3 and QDs and the number of electron hoppings between QDs will lead to the change of the charge-carrier mobility.