摘要
Si材料在微电子集成领域有着不可替代的地位。然而,在光电集成领域,由于Si为间接带隙半导体材料,Si材料本身并不是很适合用来制作发光器件。但是,成熟的微电子制造技术促使Si基光电器件的研究受到了越来越多的关注。本文介绍了在全硅发光取得新突破的PERL型Si基LED,分析了该结构中提高发光效率的关键技术,并对此结构进行评述,给今后的全硅发光研究领域提供了一个新的思路。
Silicon material can not be replaced by any other semiconductor material in the microelectronics integration area. But in OEIC （Optoelectronic integrated circuit）, due to its indirect band gap semiconductor material, silicon is regarded as a notoriously poor emitter of fundamentally. However, because of the mature microelectronics manufacturing technology, the study of Si-based optoelectronie device focused more and more attention. In the paper PERL Si-based LED was introduced as high efficiency full-silicon luminescence device. And the key technologies in the structure were analyzed to provide a new idea for further study in full-silicon luminescence area.
出处
《光机电信息》
2009年第1期34-37,共4页
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