摘要
近年来,窄带隙半导体材料因具有吸收太阳光可见波段能量、可见光催化降解有机物及可见光解水制氢的优异特性而成为新型半导体材料的研发热点。综述了以TiO2为代表的传统半导体材料掺杂体系以及全新组成材料体系等两大类具有窄带隙半导体特性的材料种类、光催化性能的影响因素、材料制备工艺以及应用前景,并在此基础上展望了研究与发展方向。
In recent years, narrow band gap semiconductors have attracted extensive attention and become the research focus of the novel semiconductor materials because they are capable of absorbing the visible light, degrading the organic pollutants and producing dean energy by splitting the water into hydrogen and oxygen under visible light irradiation. In this paper the material classification, factors controlling the pbotocatalytic performance, material synthesis technique and future application of two kinds of materials with narrow band gap characters, the modified titania and new narrow band gap semiconductor are summarized. Finally, the development trend of their research and application is also discussed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第3期24-28,共5页
Materials Reports
关键词
窄带隙半导体
可见光催化
可见光解水
带隙
制备工艺
narrow band gap semiconductor, visible-light catalysis, water spihting, band gap, synthesis method