掺硼金刚石薄膜二次电子发射特性的研究

Study on Secondary Electron Emission Performance of B-doped Diamond Films

掺硼金刚石薄膜具有负电子亲和势和良好的电子运输性能且容易制备,作为冷阴极材料在图像显示技术和真空技术等方面都有着巨大的应用价值,引起人们的注意。从二次电子发射的机理以及影响二次电子发射系数的因素等方面,对如何利用MPCVD法制备出高二次电子发射系数的掺硼金刚石薄膜进行了综述。论述表明通过合适的工艺条件,对薄膜表面进行适当的处理,是可以制备出高二次电子发射系数的阴极用金刚石薄膜的。

Prdoped diamond thin films as an attractive cold cathode meterial used in picture display technique and vacuum technique etc have great application value, because of their specific negative electron affinity surfaces, good electron transport properties and the easy acquirement. This huge application value draws people＇s attention . How to use MPCVD making B-doped diamond thin films with high secondary electron emission yield is described and reviewed by analyzing the mechanism of secondary electron emission and factors which influence the secondary electron emission yield in this paper. It＇s shown that, higher quality and higher secondary electron emission yield diamond thin films used for cold cathode meterial can be prepared by an appropriate method of surface treatment on appropriate technologeial conditions.