期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

加热处理的SiC-C涂层注H^＋前后表面形貌及其Si分布的研究 被引量：3

The Morphology and Si Depth Profile for the Heat-treated SiC-C Coatings before and after H^+ Ion Implantation
下载PDF
导出
摘要 为了提高放射性废物包装用的不锈钢材料的阻氚性能,采用离子束混合技术在不锈钢表面沉积低Z材料的SiC-C涂层,对50%SiC-C涂层进行不同条件的加热处理以及随后进行的剂量为1×1018/cm2H+的注入,研究涂层微观结构的变化,该研究为涂层的实际使用提供科学依据。研究结果表明:离子束混合沉积在不锈钢基体上的50%SiC-C涂层经加热处理后会发生涂层元素的扩散迁移。随着加热温度的提高,发生颗粒凝聚晶化现象;氢离子注入会产生非晶化效应,同时导致涂层元素Si向表面及界面的增强迁移。 50% SiC-C coatings were prepared on stainless steel with ion beam mixing in order to improve the hydrogen resistance of stainless steel, which is made of container storing radioactive waste materials. These samples were thrmally treated in different conditions and then implanted with a dose of 1 × 10^18/cm^2 of H^ ＋ ion to simulate the environmental status and to offer the basic data for their application in the future. The results show that the components of the ion beam mixed SiC-C coatings are diffused after heat treating. With the increasing of the heat temperature,the congelation and crystallization of the particles in the coatings happened. H^ ＋ ion implantation leads to de-crystallization and, at the same time, enhances to Si migrating to the surface and the interface between coating and substrate.
作者 杜良 曾俊辉 张东 杜纪富 杨淑勤 任丁 刘宁 黄宁康
机构地区 中国工程物理研究院核物理与化学研究所 四川大学
出处 《表面技术》 EI CAS CSCD 北大核心 2009年第1期11-13,共3页 Surface Technology
关键词 SiC—C涂层 离子注入 表面形貌 Si深度分布 SiC-C coatings Ion implantation Surface morphology Si depth profile
分类号 TG174.444 [金属学及工艺—金属表面处理]
  • 相关文献

参考文献8

  • 1Nakamura H,Ohira S, Shu W,et al. Tritium permeation experiment using a tungsten armored divertor-simulating module [J]. Journal of Nuclear Materials, 2000, 283-287 : 1 043-1 047
  • 2Raeauh C,Serra E, Fenici P. Formation of permeation barriers on ceramic SiCk/SiC eomposites [J]. Journal of Nuelear Materials, 2004, 233-237 : 1 262-1 265
  • 3Huang N K,Yang B,Xiong Q, et al. Behaviors of hydrogen in C-SiC films with IR and SIMS analyses[J]. Nuclear Instruments and Methods in Physics Research Section B, 2002, 195 (3/4) : 344-349
  • 4Huang N K,Xiong Q,Wang D Z. Study in chemical bonding states of SiC films before and after hydrogen ion irradiation[ J]. Journal of Nuclear Materials, 2003, 321 (2/3) : 152-157
  • 5Huang N K, Wang M H, Shen Y. Multifunction equipment combining ion, electron and atom beams[J]. Measurement Science and Technology, 1992,3 : 879-883
  • 6Haguib H M, Kelly R. The crystallization of amorphous ZrO2 by thermal heating and by ion bombardment[ J]. Journal of Nuclear Material, 1970, 35(3) :293-305
  • 7Haguib H M , Kelly R. Criteria for bombardment - induced structural changes in non-metallic solids [ J]. Radiation Effects and Defects in Solids, 1975, 25(1) :1-12
  • 8彭晓峰,孟佳,陈杰锋,宋力昕,胡行方.α-SiC∶H薄膜的热行为研究[J].硅酸盐学报,2003,31(7):654-658. 被引量：3

二级参考文献27

  • 1GOELA J S, TAYLOR R L. Rapid fabrication of lightweight ceramic mirrors via chemical vapor deposition[J]. Appl Phys Lett, 1989, 54(25):2512--2514.
  • 2GOELA J S, BURNS L E, TAYLOR R L, Transparent chemical vapor deposited β- SiC[J]. Appl Phys Lett, 1994,64(2): 131--133.
  • 3KHOUNSARY A, FERNANDEZ P, ASSOUNFID L, et al.Design, fabrication and evaluation of an internally cooled silicon carbide mirror[J]. Rev Sci Instrum, 2002, 73(3):1537--1540.
  • 4KIMOTO T, ITOH A, MATSUNAMI H, et al. Step bunching mechanism in chemical vapor deposition of 6H- and 4H--SiC(0001) [J]. J Appl Phys, 1997,81(8):3494--3500.
  • 5ZETTERLING C M, OSTLING M, WONGCHOTIUL K,et al. Investigation of aluminum nitride grown by metal-or-ganic chemical vapor deposition on silicon carbide[J]. J Appl Phys, 1997, 82(6):2990--2995.
  • 6RICHTER W, FISSEL A, KAISER U, et al. Hexagonal and cubic SiC thin films on SiC deposited by solid source MBE[J].Diamond Relat Mater, 1997, 6(10): 1316--1320.
  • 7HUANG Jipo, WANG Lianwei, WEN Jun , et al. Effect of annealing on SiC thin films prepared by pulsed laser deposition[J]. Diamond Relat Mater, 1999,8:2099--2102.
  • 8CARBONE A, DEMICHELIS F, KANIADAKIS G. Annealing temperature dependence of the optical properties of sputtered hydrogenated amorphous silicon carbide[J]. J Non-Cryst Solids, 1991,128: 139--145.
  • 9MAGAFAS L. The effect of thermal annealing on the optical properties of a- SiC : H films[J]. J Non-Cryst Solids, 1998,238: 158--162.
  • 10RUTTENSPERGER B, KROTZ G, MULLER G, et al.Crystalline - amorphous contrast formation in thermally crystallized SiC [J]. J Non-Cryst Solids, 1991, 137 - 138:635--638.

共引文献2

同被引文献32

  • 1秦鹤勇,焦兰英,张北江,胥国华.GH4698合金的热处理制度[J].钢铁研究学报,2007,19(2):39-42. 被引量：10
  • 2NAKAMURA H, OHIRA S, SHU W, et al. Tritium Perme- ation Experiment Using a Tungsten Armored Divertor-simu- lating Module [ J ]. Journal of Nuclear Materials, 2000,283/ 284/285/286/287 : 1043,1047.
  • 3RACAULT C, SERRA E,FENICI P. Formation of Permeation Bariers on Ceramic SiC/SiC Composites[ J]. Journal of Nucle- ar Materials ,2004,233/234/235/236/237 : 1262-1265.
  • 4SHU K M,TU G C. The Microstructure and the Thermal Ex- pansion Characteristics of Cu/SiCp Composites [ J]. Mater Sci Eng A ,2003,349:236-247.
  • 5NAGEL R, WEYRICH K, HOFMANN D H H, et al. Heavy Ion Induced Intermixing of Metal/SiC Interfaces [ J ]. Nucl Instrum Meth B ,2001,178:315-318.
  • 6LING Y H, LI J T, GE C C. Fabrication and Evaluation of SiC/Cu Functionally Graded Material Used for Plasma Fa- cing Components in a Fusion Reactor [ J ]. J Nucl Mater, 2002,303 : 188-195.
  • 7SUINO A, YAMAZAKI Y, NITFA H, et al. Tracer Diffusion of Cu in CVD D-SiC [ J ]. J Phys Chem Solids, 2008 (2/3) : 311-314.
  • 8HUANG N K, XIONG Q, WANG D Z. Study in Chemical Bonding States of SiC Films before and after Hydrogen Ion Irradiation [ J ]. Journal of Nuclear Materials, 2003,321 ( 2/ 3 ) : 152-157.
  • 9HUANG N K, WANG M H, SHEN Y. Muhifunetion Equip- ment Combining Ion, Electron and Atom Beams [ J ]. Meas- urement Science and Technology, 1992,3:879-883.
  • 10MAGEE C W, HONIG R E. Depth Profiling by SIMS-depth Resolution, Dynamic Range and Sensitivity [ J ]. Surf Inter- face Anal,2000,4(2) :35-41.

引证文献3

二级引证文献1

表面技术
2009年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部