摘要
为制备光学性能良好的TiO2薄膜。采用离子束溅射(IBS)的方法,改变退火温度,在Si基底上制备氧化钛(TiO2)薄膜。利用XRD、XPS、SEM测试薄膜的成分、结晶形式和表面形貌,椭圆偏振光谱仪分析薄膜折射率和消光系数。试验结果发现:随退火温度的增加,薄膜由锐钛矿相变为金红石相,400℃薄膜结晶为锐钛矿相TiO2,1 100℃退火后,薄膜结晶为金红石相TiO2;退火温度升高使薄膜折射率和消光系数随之升高。由此可得,800℃退火时,TiO2薄膜具有最佳光学性能。
Titanium dioxide（TiO2）thin films have synthesized on silicon wafers by ion bean sputtering（IBS） at different annealing temperature. XRD, SEM were used to analyze the component crystal and surface topography; XPS was used to analyse the component; Ellipsometry spectral apparatus was used to analyse the refractive index and extinction coefficient. It was found that, annealed at 400℃ anatase phase appeared in TiO2 thin films. Annealed at 800℃, ruile phase appeared in TiO2 thin films. Annealed at temperature above 1 100℃, anatase phase changed into mile phase completely. As anealing temperature increase, the refractive index and extinction coefficient of the thin films increase. The TiO2 thin films annealed at 800℃ has the best optical properties.
出处
《表面技术》
EI
CAS
CSCD
北大核心
2009年第1期40-42,共3页
Surface Technology
关键词
TIO2
退火温度
结晶
光学性能
薄膜
离子束溅射
TiO2
Annealing Temperature
Crystal
Optical performance
Thin film
Ion bean sputtering
