InGaAs/GaAs应变单量子阱的表面光伏谱

Surface Photovoltaic Spectra of Strained InGaAs/GaAs Single Quantum Well

采用表面光伏谱方法，测量了应变ＩｎＧａＡｓ／ＧａＡｓ单量子阱在不同温度下光伏效应．结合理论计算对样品表面光伏谱的谱峰进行了指认，分析了量子阱内子能级间的跃迁能量。

Surface photovoltaic (SPV) spectral method has been used to measure the photovoltaic effect of the strained InGaAs/GaAs single quantum well at different temperatures. Compared with the theoretical calculation, the transition peaks of the SPV spectra were identified. The relation between the temperature and the sub band transition energy, transition intensity and the half width of the transition peak of the quantum well was discussed.