AgI的高压电学性质

Electrical Property of AgI under High Pressure

利用在金刚石对顶砧上集成的微电路，高压原位测量了AgI的电导率，实验观察电导率随压力的变化规律，并在不同压力下，测量了岩盐相结构AgI的电导率随温度（293～443K）的变化关系，实验结果表明，In（σT）与10^3T^-1近似呈线性关系．计算了传导离子浓度和Frenkel缺陷扩散的激活能，并测量了KOH型结构AgI的电导率与温度和压力间的关系，得到压力高于20GPa时的能隙与压力关系．

In-situ conductivity measurement of AgI under high pressure and ambient temperature was carried out via fabricated microcircuit on diamond anvil cell （DAC）. It was observed that conductivity changed with the increasing pressure. The temperature and pressure dependences of conductivity in rs-AgI were studied under several pressures at temperatures from 293 K to 443 K. The experimental data show the plot of ln（σT） versus 10^3 T^-1 is approximately linear. The ionic carries concentration and activation energy for defect transport were calculated. And also, we investigated the temperature and pressure dependences of conductivity in KOHtype AgI and obtained the relation between energy gap and pressure.