大功率半导体激光器腔面处理方法

Facet Treatment of High-Power Semiconductor Laser Diodes

介绍了采用非注入电流腔面和透明窗口减小腔面电流的方法。减小腔面非辐射复合的方法包括采用高真空下解理、镀膜防止腔面氧化;采用真空等离子洗或化学气体腐蚀清除腔面氧杂质沾污。论述了合适的腔面膜系组合和膜系组分有利于减小腔面膜层应力,改善散热能力。指出将抑制腔面电流、防止腔面氧化等方法组合,再加上合理的结构设计和热管理等综合应用,以及将半导体材料-镀膜膜层交界面处于光驻波波谷,可有效提高器件的灾变光学镜面损伤(COMD)阈值。

The unpumped end section and transparent windows are used tO decrease the facet carriers. Reducing facet nonradiative recombination center involved to cleave the wafer into bar in ultrahigh vacuum and coating, and ion milling or chemical gas etching was used to remove the native oxide contaminant in the facet. Optimized combination of coating films and appropriate layers component may decrease the film strain and get good thermal conduction. In theoretically, if the minimum of the standing optical wave in the laser is at the intersection of semiconductor and coating film, it can get the high catastrophic optical mirror damage （COMD） threshold. All the above mentioned means, including suppressing facet carrier, preventing mirror oxidation, making reasonable design and thermal management, may be needed to get the desired COMD threshold.