摘要
本文利用反应蒸发方法在NH_3气氛中淀积了TiN薄膜。俄歇电子谱(AES)、X射线衍射技术和电特性测量等方法分别用来分析了在不同NH_3气压和不同衬底温度条件下所淀积的TiN薄膜的组分、晶体结构和电特性。Al/TiN/Si金属化系统经550℃、30分钟退火,卢瑟福背散射研究结果表明,TiN是一种有效的扩散势垒材料。
TiN films were deposited on silicon wafers by reactive evaporation in an ammonia gas. The composition, crystalline structure of film and electrical properies at different NH3 pressure and substrate temperature were investigated by Auger electron spectros-copy (AES), X-ray diffraction analysis and electrical characteristic measurements. Rutherford backscattering studies showed that TiN is an effective diffusion barrier up to 550℃for 30 min of annealing between Al and Si.
出处
《北京大学学报（自然科学版）》
CAS
CSCD
北大核心
1989年第3期261-268,共8页
Acta Scientiarum Naturalium Universitatis Pekinensis
基金
国家自然科学基金
