MOCVD法横向外延过生长GaN薄膜

Lateral epitaxial overgrowth GaN thin film with MOCVD

介绍了金属有机化学气相沉积(Metal-Organic Chemical Vapor Deposition,MOCVD)法横向外延过生长GaN薄膜的原理,阐述了该技术形成选择生长和减少GaN薄膜缺陷密度的机理。综述了该技术的发展历程以及最新进展。新型的横向外延过生长技术大大简化了生长工艺以及降低了晶向倾斜。

The principle of lateral epitaxial overgrowth GaN thin film with MOCVD was introduced. The reasons of selective growth formation and dislocation density degradation in GaN thin film were explored in principle. The developing course and current states of the technique were reviewed. The epitaxy growth process was simplified greatly and the crystallographic tilt was degraded in the newly lateral epitaxial overgrowth techniques .