摘要
本文报道用分子束外延（ＭＢＥ）技术生长的Ｃｄ１－ｘＭｎｘＴｅ／Ｃｄ１－ｙＭｎｙＴｅ超晶格样品在８０Ｋ下的光调制反射谱实验结果。观测到１１Ｈ、２２Ｈ、３３Ｈ和１１Ｌ等激子跃迁结构。计及晶格失配导致的应力效应，对子能级结构进行了理论计算。实验结果与理论计算符合较好。
The observation of photoreflectance spectra of Cd 1-x Mn x Te/Cd 1-y Mn y Te superlattices was carried out at temperature T=80 K .The samples were grown by molecular beam epitaxy(MBE)technique.The heavy and light hole excitonic transition structures 11H,22H,33H and 11L were observed and the theoretical calculations ,including the strain effects,were performed.By comparison,both agree well.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1998年第2期129-134,共6页
Spectroscopy and Spectral Analysis
基金
国家自然科学基金
关键词
稀磁半导体
超晶格
光调制反射谱
MBE
DMS
Diluted magnetic semiconductor
Superlattices
Photoreflectance
Strain effects
