摘要
本文报道利用光波导方法在GaAs衬底上制备的Ⅱ—Ⅵ族半导体单晶薄膜和超晶格中所观测到的光学吸收、光学非线性和瞬态光学双稳的实验结果。
The untransparent substrates on the epitaxial layer need not be etched out from chemistry etching to prepare the “window” through light.The optical absorption,optical nonlinearities and optical bistabilities of the semiconductor thin films with the nanostructure grown on the untransparent substrates can be directly measured by the end face coupling method of optical waveguide.Meanwhile,the several experiment examples of Ⅱ—Ⅵ single crystal thin films and superlattices grown on GaAs substrate are demonstrated in this paper.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1998年第2期139-143,共5页
Spectroscopy and Spectral Analysis
基金
国家自然科学基金
中国科学院激发态物理开放实验室资助
关键词
Ⅱ-Ⅵ族
半导体
光学
非线性
双稳
光波导技术
Optical measurement method by optical waveguide, Ⅱ—Ⅵ semiconductor, Optical nonlinearities, Optical bistabilities.