摘要
运用共振隧穿双势垒(DBRT)结构中的一种压阻效应原理—介观压阻效应,用GaAs/AlAs/InGaAs DBRT结构薄膜作为敏感元件,设计了一个周边固支平膜片结构的压力传感器。并对介观压阻和普通压阻灵敏度的量级作出了比较,验证了介观压阻效应原理,可以提高压力传感器的灵敏度,为制造基于介观压阻效应的新型超敏感型传感器提供了一定的理论依据。
This paper used a piezoresistive effect-meso-piezoresistive effect-in a double-barrier resonant tunneling （DBRT） structure, took GaAs/A1As/InGaAs DBRT film as core component,a pressure sensor with a film fixed around is designed. Grade of sensitivity are compared meso-piezoresistive with general,principle of meso-piezoresistive effects is verified,it can be inproved sensitivity of sensor to produced new micro-transducers based on meso-piezoresistive effect offers a new means.
出处
《电子设计工程》
2009年第2期102-103,共2页
Electronic Design Engineering
基金
国家自然科学基金资助项目(60776062)
