在半导体硅上电沉积及激光诱导电沉积镍薄膜

ELECTRODEPOSITION AND LASER INDUCED ELECTRODEPOSITION OF NICKEL FILM ON SEMICONDUCTOR SILICON

利用激光诱导电沉积实验控制和数据采集系统考察了Ｎｉ在ｐ－Ｓｉ上沉积和阳极溶出过程．结果表明半导体表面自然氧化膜和阳极钝化膜导致阴极反应过电位大幅度增加，反应电流下降，且钝化膜导致暂态电流上升迟缓．Ｎｉ阳极溶出实验表明薄膜由活性不同的两种相结构组成．在电沉积初期可获得由平均尺寸为３００～６００ｎｍ晶粒构成的光亮镀层，晶粒尺寸随镀层加厚，迅速变大，薄膜表面失去光泽．

The deposition of nickel on p type silicon and the anodic strpping process of the deposits were investigated utilizing laser induced electrodeposition experiment control and data acquisition system.Both native film and passive film on the semiconductor caused an increase in overpotential of cathodic reaction and a decline in current.Besides,the passive film resulted in a delay of transient current.The anodic stripping experiment showed that there are two kinds of phase structure with different activities in the nickel deposit.In the early stage of the deposition,small grains with in average size of 300～600 nm can be obtained and therefore bright coating formed.With the increase in thickness of the film,grains grow to 3 μm,and the surface became less bright.