锑化铟位错显示中后处理的效果

Effects of Later Stage Treatment in Semiconductor Indium Antimonide (InSb) Dislocation Display

本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法,并通过大量的实验证实了这种方法的可行性。这种方法无须象传统方法那样对样品进行严格的研磨、抛光,将制作、显示一个样品所需时间由原来的80min左右缩短为5min左右。本方法具有迅速、准确、简单可靠等特点,可供研究晶体缺陷时参考。

The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments. This method needn't stringent grind and polish to sample as traditional method, time and display a sample from about eighty minute shorten to about five minute. Its peculiarities are speedy, accurate, simple, dependable. This method can provide reference in studying crystal defects.