碳辅助CVD制备氧化硅纳米线及其光学性能

Carbon Assisted CVD Synthesis of SiOx Nanowires and Their Optical Property

利用碳辅助CVD方法,在1100～1140℃、常压、N2/H2气氛下,以Fe-Al-O复合体系为催化剂,在石英衬底上制备了大量非晶氧化硅纳米线.该纳米线直径为20～200nm,长数百微米.利用透射电镜、扫描电镜及电子能谱对氧化硅纳米线的形貌及组分进行了表征与分析;FTIR光谱显示了非晶氧化硅的3个特征峰(482,806和1095cm-1)和1132cm-1无序氧化硅结构的强吸收峰.氧化硅纳米线的光致发光光谱(PL)表明其具有较强的438nm荧光峰.

High-density, large-scale SiOx （x≤2） nanowires were successfully fabricated using carbon-assisted CVD method with Fe-Al-O catalyst at 1100--1140℃, under a flowing N2/H2 atmosphere. The SiOx nanowires are uniform with a diameter of 30--200 nm and a length of up to a few handrand micrometers. SEM, TEM, EDS, FTIR and PL were preformed to characterize the microstructure, composition and optics performances of the nanowires. The nanowires show IR absorption peaks at 482, 806, 1095 and 1132 cm^-1 The PL peak of the nanowires is at 438 nm.