摘要
An integrated fully differential ultra-wideband CMOS receiver for 3.1-4.8 GHz MB-OFDM systems is presented. A gain controllable low noise amplifier and a merged quadrature mixer are integrated as the RF front-end. Five order Gm-C type low pass filters and VGAs are also integrated for both I and Q IF paths in the receiver. The ESD protected chip is fabricated in a Jazz 0.18μm RF CMOS process and achieves a maximum total voltage gain of 65 dB, an AGC range of 45 dB with about 6 dB/step, an averaged total noise figure of 6.4 to 8.8 dB over 3 bands and an in-band IIP3 of-5.1 dBm. The receiver occupies 2.3 mm2 and consumes 110 mA from a 1.8 V supply including test buffers and a digital module.
An integrated fully differential ultra-wideband CMOS receiver for 3.1-4.8 GHz MB-OFDM systems is presented. A gain controllable low noise amplifier and a merged quadrature mixer are integrated as the RF front-end. Five order Gm-C type low pass filters and VGAs are also integrated for both I and Q IF paths in the receiver. The ESD protected chip is fabricated in a Jazz 0.18μm RF CMOS process and achieves a maximum total voltage gain of 65 dB, an AGC range of 45 dB with about 6 dB/step, an averaged total noise figure of 6.4 to 8.8 dB over 3 bands and an in-band IIP3 of-5.1 dBm. The receiver occupies 2.3 mm2 and consumes 110 mA from a 1.8 V supply including test buffers and a digital module.
基金
supported by the National Eleven-Five Project Funding (No.51308020403)
the Science and Technology Commission ofShanghai Municipality (No.08706200700)
