期刊文献+

Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit 被引量:3

Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit
原文传递
导出
摘要 A 320×240 pixel organic-light-emitfing-diode-on-silicon (OLEDoS) driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit's power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 (the diagonal is about 13 mm). The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW. A 320×240 pixel organic-light-emitfing-diode-on-silicon (OLEDoS) driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit's power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 (the diagonal is about 13 mm). The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第1期86-89,共4页 半导体学报(英文版)
基金 supported by the State Key Development Program for Basic Research of China (No. 2003CB314705)
关键词 OLED-ON-SILICON MICRODISPLAY driving circuit 16 gray scales D/A converter OLED-on-silicon microdisplay driving circuit 16 gray scales D/A converter
  • 相关文献

参考文献8

  • 1Armitage D, Underwood I, Wu S T. Introduction to microdisplays. Chichester: John Wiley & Sons Ltd, 2006:1.
  • 2Bardsley J N. International OLED technology roadmap. IEEE J Sel Topics Quantum Electron, 2004, 10 (1): 3.
  • 3Levy G B, Evans W, Ebner J, et al. An 852x600 pixel OLED- on-silicon color microdisplay using CMOS subthresholdvoltage-scaling current drivers. IEEE J Solid-State Circuits, 2002, 37 (12): 1879.
  • 4Ng R. Design and application of OLED drivers. Available: http://www.solomon-systech.com/pdf/IIC-China%202004_040 114.pdf.
  • 5Aerts W F, Verlaak S, Heremans P. Design of an organic pixel addressing circuit for an active-matrix OLED display. IEEE Trans Electron Devices, 2002, 49:2124.
  • 6Lee C A, Lee J D, Park B G. Design of a CMOS on-chip driver circuit for active matrix polymer electroluminescent displays. SID'03 Digest, Daegu, Korea, 2001:330.
  • 7Dawson R, Shen Z, Furst D A, et al. The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays. International Electron Devices Meeting, Princeton, NJ, USA: Sarnoff Corp, 1998:875.
  • 8Baker R J, Li H W, Boyce D E. CMOS circuit design, layout and simulation. New York: IEEE Press, 1997:83.

同被引文献13

  • 1才华,司玉娟,郎六琪,刘式墉.彩色有源OLED显示屏上像素仿真及外围驱动电路设计[J].发光学报,2006,27(4):618-623. 被引量:7
  • 2刘辉.OLED驱动控制电路的研究[D].长春:中国科学院长春光学精密机械与物理研究所,2004.
  • 3Hrishikesh K. Subthreshold circuits: design, implementation and application[D]. New York: Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science in Electrical Engineering, Kate Gleason College of Engineering Rochester Institute of Technology Rochester, 2009.
  • 4Levy G B, Evans W, Ebner J, et al. An 852 × 600 pixel OLED-on-silicon color microdisplay using CMOS subthreshold-voltage-scaling current drivers[J]. Solid-State Circuits, IEEE Dee, 2002,37 (12) : 1879-1889.
  • 5Levy, Gary B.,Evans, William,Ebner, John,Farrell, Patrick,Hufford, Mike,Allison, Bryan H.,Wheeler, David,Lin, Haiqing,Prache, Olivier,Naviasky, Eric.An 852600 pixel OLED-on-silicon color microdisplay using CMOS subthreshold-voltage-scaling current drivers. IEEE Journal of Solid State Circuits . 2002
  • 6Prache,O.Full-color SVGA+ OLED-on-silicon microdisplay. Journal of the Society for Information Display . 2002
  • 7Vittoz E A,Fellrath J.CMOS analog integrated circuits based on weak inversion operation. IEEE Journal of Solid State Circuits . 1977
  • 8Ihor Wacyk,Amal Ghosh,Olivier Prache,et al.Ultra-high resolution and high-brightness AMOLED. Proceedings of SPIE the International Society for Optical Engineering . 2013
  • 9Microoled Corporation.0.38″1.7M dots-MDP01CC Product Datasheet. . 2013
  • 10Ihor Wacyk,Olivier Prache,Tariq Ali,et al.OLED microdisplay design and materials. Proceedings of SPIE the International Society for Optical Engineering . 2010

引证文献3

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部