SiO_2/Au高反射率半导体激光器腔面涂层的制备与研究

Preparation and Studies of SiO_2/Au Facet Coat with High Reflectivity for Semiconductor Lasers

处在长时间工作中的半导体激光器,由于晶体的局部过热和一些不完整性,容易造成腔面损伤,降低器件寿命,且从激光器后腔面射出的光大都损失掉了,不能得到充分利用,影响了光源的效率。因此。

We report the preparation of SiO_2/Au facet coat with high reflectivity for semiconductor lasers by electron beam＇evaporation. The influence of this facet coat on lasing characteristics of semiconductor lasers is presented and discussed. A facet coat with the reflectivity of about 93％ has been made. The device threshold current was decreased as low as 36％.