电场对量子阱中激子的影响

Effect of an Electric Field on the Binding Energy of Excitions in Semiconductor Quantum Wells

利用变分方法计算了GaAs/Al_2Ga_(1-x)As量子阱中激子的束缚能,分析了电场、势阱宽度对激子束缚能的影响。采用明显不可分离的试探波函数,并考虑了电场对势阱中载流子几率分布的影响,计算了重空穴激子和轻空穴激子吸收峰位置随电场变化,结果与实验值符合得较好。

We have calculated the binding energy of excitons in GaAs/Al_xGa_(1-x)As quantum wells with a variational method and discussed effects of an electric field and the well width on the exciton binding energy. We have used a non-separable trial wave function and considered the effect of electric field on the probability distribution of carriers within the potential well. The theoretical result, absorption peak positions of heavy-hole excition and light-hole exciton vary with electric field is in good agreement with the experimental result.