受光区具有薄n层结构的光控晶闸管的研究

Studies on the Light Triggered Thyristor with an n-Emitter Layer over the Light-Sensitive Gate Area

本文研讨了具有薄n层结构的受光区,对提高光控晶闸管的光触发灵敏度的作用及触发灵敏度与dV/dt耐量间的协调关系,结果表明,这种结构可使其具有较高的触发灵敏度,可较好的协调灵敏度与dV/dt耐量间的关系。并利用这一结构,研制出了高灵敏度的500A,2000V直接光触发晶闸管。

A 500 A, 2000 V, 45 mm dia. directly light triggered thyristor has been developed. This device has got an n-emitter layer over the light-sensitive gate area, because of this, an excellent tradeoff relation between light triggering sensitivity and dV/dt capability is achieved. This result is demonstrated by both theoretical analysis and experiment in this paper.