摘要
本文研讨了具有薄n层结构的受光区,对提高光控晶闸管的光触发灵敏度的作用及触发灵敏度与dV/dt耐量间的协调关系,结果表明,这种结构可使其具有较高的触发灵敏度,可较好的协调灵敏度与dV/dt耐量间的关系。并利用这一结构,研制出了高灵敏度的500A,2000V直接光触发晶闸管。
A 500 A, 2000 V, 45 mm dia. directly light triggered thyristor has been developed. This device has got an n-emitter layer over the light-sensitive gate area, because of this, an excellent tradeoff relation between light triggering sensitivity and dV/dt capability is achieved. This result is demonstrated by both theoretical analysis and experiment in this paper.
出处
《吉林大学自然科学学报》
CAS
CSCD
1990年第3期47-50,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
光控管可控硅
触发灵敏度
受光区
light sensitive gate area, light triggered thyristor, light triggering sensitivity, dV/dt capability