碲镉汞光导器件的交叠结构与性能

OVERLAP STRUCTURE AND PERFORMANCE OF HgCdTe PHOTOCONDUCTIVE DEVICE

少数载流子扫出效应是限制碲镉汞（ＨｇＣｄＴｅ）光导器件性能提高的重要因素之一。交叠结构的光导器件能有效地消除少数载流子扫出效应。就结构的尺寸问题，进行了理论分析和实验，实验结果与理论符合，器件响应率有较大的提高。

Minority - carrier sweepout is one of the important factors limiting the performance of HgCdTe photoconductive device . The overlap structure proposed by Kinch M A can restrain minority - carrier sweepout . Contents of theoretical analysis and experiments on the overlap length of this structure are given in this paper. The experimental result fits well with theoretical mode and the re- sponsivity of the device is raised greatly .