摘要
采用2μm GaAs HBT技术实现了单片集成线性功率放大器(PA)在5 GHz无线局域网中的应用。在单端三级功率放大器中应用片上电感和键合线电感对输入,级间网络进行匹配设计,输出匹配网络在PCB上实现。在单独供电3.3 V的情况下,功率放大器的仿真结果是线性输出功率24 dB(1 dB压缩点),小信号增益35 dB,1 dB压缩点处功率附加效率(PAE)39%;GaAsHBT MMIC功率放大器测试呈现线性输出功率20.5 dB(1 dB压缩点),小信号增益27 dB,1 dB压缩点处功率附加效率(PAE)36%;芯片尺寸仅480μm×450μm。
A monolithic integrated linear power amplifier （PA） for 5 GHz WLAN application was realized in 2 μm GaAs HBT technology. On,chip inductors and bond-wire inductance were used for input, interstage net matching design in the single-end 3-stage power amplifier, and output matching net was on PCB. Under a single supply voltage of 3.3 V, the simulation results of the power amplifier is linear output power of 24 dBm （P1dB）, small signal gain is of 35 dB and the power added efficiency （PAE） is of 39% at P1dB; the GaAs HBT MMIC power amplifier exhibits linear output power of 20.5 dBm （P1ds）, small signal gain of 27 dB and the power added efficiency （ PAE ） of 36 % at P1dB. The die size is only 480 μm ×450 μm.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第1期31-33,44,共4页
Semiconductor Technology
