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SEU/SET加固D触发器的设计与分析 被引量：5

Design and Analysis of SEU/SET Hardened D Flip-Flop
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摘要 针对D触发器的抗单粒子辐射效应加固,提出了一种新型的保护门触发器(GGFF)设计,使用两个保护门锁存器串接成主从触发器。通过Spice仿真验证了GGFF抗SEU/SET的能力,通过比较和分析,证明GGFF对于具有同样抗SEU/SET能力的时间采样触发器(TSFF),在电路面积和速度上占据明显优势。 A novel guard gate flip-flop （GGFF） design was proposed for mitigating D flip-flop single event effects. Master-slave flip-flop was constructed by two guard gate latches connected in series. Spice simulation was utilized to verify that GGFF can mitigate SEU and SET. After comparison and analysis it can be proved that GGFF is much better in chip size and speed than temporal sampling flip-flop （TSFF）, which can also mitigate SEU and SET.
作者 黄晔 程秀兰
机构地区 上海交通大学微电子学院
出处 《半导体技术》 CAS CSCD 北大核心 2009年第1期69-72,共4页 Semiconductor Technology
关键词 单粒子效应 D触发器 保护门 single event effects D flip-flop guard gate
分类号 TN43 [电子电信—微电子学与固体电子学]
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参考文献5

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同被引文献41

  • 1赵金薇,沈鸣杰,程君侠.改进型抗单粒子效应D触发器[J].半导体技术,2007,32(1):26-28. 被引量：4
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引证文献5

二级引证文献13

半导体技术
2009年 第1期

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