摘要
用变温法测量了GaAs基共振隧穿二极管(RTD)器件的串联电阻参数。与网络分析仪法不同,变温法是通过测量RTD器件在不同温度下的I-V特性曲线,用数学方法求解曲线特定区域的相关参数得到串联电阻值。为了便于对比,设计并研制了两种发射极面积的RTD器件,经测量发现,发射极面积对于RTD的串联电阻有较大影响。对其产生原因进行了详细的分析,为RTD在高频电路中的应用奠定了基础。
A varying temperature method was adopted for measuring series resistance of GaAs-RTD device. Differing from network analyzer method, the series resistance can be obtained by mathematical solution on the given region of I-V characteristics curves by varying temperature method. RTD devices of two emitter areas were designed and fabricated for comparison. Through the measurement, emitter area influences the series resistance of RTD strongly. The analysis on the reason is earried out, it is the foundation of application in different circuits.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第1期83-87,共5页
Semiconductor Technology
基金
国家973课题项目(2002CB311905)
关键词
共振隧穿二极管
串联电阻
变温法
resonant tunneling diode
series resistance
varying temperature method
