摘要
以石英片为基底,采用直流/射频磁控共溅射法制备了掺Al、掺Ti的VO2薄膜。对所制样品进行了电阻-温度关系、原子力显微镜、透射光谱等光电性能测试。结果分析表明,Al元素可以提高薄膜相变温度及Ti元素可以有效提高相变前后电阻率变化幅度,并且用半导体能带理论对VO2薄膜光电性质改变的原因及掺杂对其造成的影响予以解释,提出了影响相变滞豫的原因及改善方法。最后对磁控共溅射沉积方法制备掺杂薄膜的工艺方法提出了改进。
Al-and Ti-doped VO2 films were deposited on quartz substrates using DC/RF magnetron cosputtering techniques. The resistance-temperature dependence and transmittance spectroscopy properties were tested by AFM. The experimental results indicate that the thermal-optical and electric properties of Al-doped and Ti-doped VO2 films can be changed dramatically after the phase transition. It was explained by the energy band theory, and a method was proposed to improve the magnetron co-sputtering techniques.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第2期165-167,188,共4页
Semiconductor Technology
关键词
二氧化钒薄膜
磁控共溅射
掺杂
光电特性
能带
VO2 film
magnetron co-sputtering
doping
electrical-optical properties
energy band
