摘要
应用计算机数值模拟方法计算n+(μc-SiC:H)/p(poly-Si)及n+(μc-SiC∶H)/i(a-SiC∶H)/p(poly-Si)异质结太阳能电池中的电场强度分布,说明μc-SiC/poly-Si异质结电池制造中μc-SiC:H膜厚选择,进而对嵌入a-SiC∶H薄层的μc-SiC/poly-Si异质结太阳能电池设计进行分析,包括a-SiC∶H薄层N型掺杂效应,最后讨论μc-SiC/poly-Si太阳能电池稳定性。
By means of a computer simulation method, the electric field distribution in n+ (μc-SiC: H)/p (poly-Si)and n+ (μc-SiC: H )/i (a-SiC: H )/p (poly-Si) heterojunction solar cells is presented. From these results, the optimum thickness of μc-SiC: H films in the manufacture of μc-SiC/poly-Si heterojunction solar cells is demonstrated and the design of μc-Si/poly-Si heterojunction solar cells inserted with the a-SiC: H thin layer is analysed. Also, the effect of N-type dopping in a-SiC: H thin layer and the stability of μc-SiC/poly-Si heterojunction solar cells are discussed.
出处
《光电子技术》
CAS
1998年第1期74-79,共6页
Optoelectronic Technology
关键词
异质结
太阳电池
载流子收集
制造工艺
heterojunction solar cell, Newton-Raphson solution technique, distribution of the gap states in a-SiC:H, carrier collection