μc-SiC/poly-Si异质结太阳能电池制造中的一些技术分析

Analyses of Technologies in Manufacture of μc-SiC/poly-Si Heterojunction Solar Cells

应用计算机数值模拟方法计算n＋（μc－SiC：H）／p（poly－Si）及n＋（μc－SiC∶H）／i（a－SiC∶H）／p（poly－Si）异质结太阳能电池中的电场强度分布，说明μc－SiC／poly－Si异质结电池制造中μc－SiC：H膜厚选择，进而对嵌入a-SiC∶H薄层的μc－SiC／poly－Si异质结太阳能电池设计进行分析，包括a－SiC∶H薄层N型掺杂效应，最后讨论μc－SiC／poly－Si太阳能电池稳定性。

By means of a computer simulation method, the electric field distribution in n+ (μc-SiC: H)/p (poly-Si)and n+ (μc-SiC: H )/i (a-SiC: H )/p (poly-Si) heterojunction solar cells is presented. From these results, the optimum thickness of μc-SiC: H films in the manufacture of μc-SiC/poly-Si heterojunction solar cells is demonstrated and the design of μc-Si/poly-Si heterojunction solar cells inserted with the a-SiC: H thin layer is analysed. Also, the effect of N-type dopping in a-SiC: H thin layer and the stability of μc-SiC/poly-Si heterojunction solar cells are discussed.