摘要
分析了高温高浓度磷扩散工艺生产中的种种弊病，提出了类似于硼扩散新的磷扩散方法，详细分析了新方法的可行性及优点，实验结果和理论分析一致。
In this paper the disadvantages in the process of phosphorus diffusion with high temperature and heavy impurity concentration are analyzed.A new method of phosphorus diffusion similar to that of boron diffusion is presented.The advantages of this method are discussed in detail and the feasibility is appraised as well.It can be seen that a good agreement is obtained between the theoretical and experimental results.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第2期32-34,39,共4页
Semiconductor Technology
关键词
磷
扩散
杂质分布
电流增益β
Phosphorus diffusion Impurity profile Current gain β
