摘要
本文报导了为提高ＧａＡｌＡｓ双异质结红色发光二极管的量子效率所采取的技术及初步研究成果。已研制成的高亮度红色ＬＥＤ的发光强度为４００ｍｃｄ，由于电极制作技术的改进，其正向电压降低于国外同类产品。
In this paper,the technologics used to raise the quantum efficiency of high brightness red LED,and the initial results of this study are reported.The luminous intensity of LED fabricated by this process is 400mcd,because the improvement of electrod fabrication,the forward votage is lower than the same parameter of the foreingn products.
出处
《光电子．激光》
EI
CAS
CSCD
1998年第2期94-59,共1页
Journal of Optoelectronics·Laser
关键词
双异质结
发光二级管
LED
砷铝镓
GaAlAs DH
quantum efficiency
high brightness red LED
