期刊文献+

新型高量程冲击硅微机械加速度传感器的设计与制造 被引量:5

Design and fabrication of novel high-impact silicon micro-mechanical accelerometer
下载PDF
导出
摘要 给出了一种测量高量程冲击加速度的硅微机械加速度传感器的设计和制造方法.加速度传感器采用整体式悬臂梁结构,在硅片平面内设计了两个分布方向相反结构相同的悬臂梁,每个悬臂梁顶端通过硼扩散形成两个压敏电阻,四个压敏电阻构成惠斯通全桥连接.悬臂梁两侧面和过载保护曲面采用DRIE技术加工,过载保护曲面设计成近似于冲击加速度传感器承受最大加速度时悬臂梁弯曲曲面的形状,一方面提高了悬臂梁过载保护能力,另一方面可以调节加速度传感器的工作阻尼至临界阻尼,有效提高了加速度传感器的工作频率带宽.分析和测试结果表明,加速度传感器的灵敏度达到3.024μV/g,工作频率带宽达到O~81kHz,量程达到0~50000g.加速度传感器的性能能够满足测号冲击过程的要求. The design and manufacturing method of a novel high-impact silicon micro-mechanical accelerometer is presented in this paper. A whole-beam structure is used in this accelerometer. In this aceelerometer, the two cantilevers with the same structures and the opposite distribution directions in the silicon plane. There are two varistors formed by boron proliferation on the top of each cantilever. The four varistors form the Wheatstone full bridge. Two lateral sides of cantilever and overload protection structure are fabricated using DRIE technology. A novel overload protection curvature is designed to be similar to the cantilever bending shape which is bearing the greatest acceleration. This design increases the overload protection and improves the vibration damping of accelerometer to the critical damping. The working frequency bandwidth of accelerometer is increased effectively. The experiments show that the sensitivity of accelerometer reaches 3.024μV/g, the working frequency bandwidth changes from 0 to 81 kHz and measuring scope changes from 0 to 50 000 g, the performances of accelerometer can meet the demands of impact measurement.
出处 《浙江工业大学学报》 CAS 北大核心 2009年第1期105-109,114,共6页 Journal of Zhejiang University of Technology
基金 浙江省自然科学基金资助项目(Y107445) 浙江省重中之重学科开放基金资助项目(20060313)
关键词 冲击 硅微机械加速度传感器DRIE技术 过载保护曲面 工作频率带宽 impact silicon micro-mechanical accelerometer DRIT technology overload protection curvature working frequency bandwidth
  • 相关文献

参考文献4

  • 1何洪涛,杨拥军,徐永青,吝海锋.引信用高g加速度计研究[J].微纳电子技术,2002,39(6):28-31. 被引量:6
  • 2董健.高g值冲击硅微机械加速度传感器的研究[D].杭州:浙江大学信息科学与工程学院,2003.
  • 3BAO Minhang. Micro mechanical transdueers[M]. Shanghai: Fudan University Press,2000.
  • 4黄权平.高量程微机械压阻式加速度传感器研究[D].上海:中国科学院上海微系统和信息技术研究所,2002.

二级参考文献4

  • 1[1]Lemkin M, Boser B E. A micromachined fully differential lateralaccelerometer. CICC Dig Tech Papers, 1996.5, 315~318.
  • 2[2]Kuehnel W. Modeling of the mechanical behavior of a differential capacitor acceleration sensor. Sensors and Actuators A,1995.5, A48: 101.
  • 3[3]Yazdi N, Najafi K. An all-silicon single-wafer fabrication technology for precision microaccelerometers. The 9th International Conference on Solid-State Sensors and Actuators-Transduces,'97, Chicago, Illinois, 1997, (6): 1184.
  • 4[4]Gianchandani Y B, Najafi K.A bulk silicon dissolved wafer process for microelectromechanical devices. IEEE J Microelectromechancial Syst, 1992, 1 (2): 77~85.

共引文献7

同被引文献42

  • 1杨尊先,李昕欣,于映.曲面保护高量程加速度传感器阻尼特性研究[J].光电工程,2006,33(9):138-144. 被引量:3
  • 2方华军,刘理天,任天令.硅基压电多层膜悬臂梁的偏转模型和优化设计[J].传感技术学报,2006,19(05A):1330-1332. 被引量:3
  • 3李玉龙,郭伟国,贾德新,徐绯.高g值加速度传感器校准系统的研究[J].爆炸与冲击,1997,17(1):90-96. 被引量:45
  • 4祈晓瑾.MEMS高g值加速度传感器研究[D].太原:中北大学.2007.
  • 5董培涛,李昕欣,张鲲,吴学忠,李圣怡,封松林.单片集成的高性能压阻式三轴高g加速度计的设计、制造和测试[J].Journal of Semiconductors,2007,28(9):1482-1487. 被引量:8
  • 6Okojie R S ,Atwell A R,Kornegay K T,et al. Design Considerations for Bulk Micromachined 6H-SIC High-g Piezoresistive Accelerometers [ C]//Technical Digest of the 15th IEEE International Conference on MEMS, Las Vega% NV, Jan. 20-24,2002.618 -622.
  • 7Atwell A R, Roberson R S, Beliveau A. Simulation, Fabrication andTesting of Bulk Micromachined 6H-SiC High-g Piezoresistive Ac- celerometer [ J ]. Sensors and Actuators A,2003,14 : 11 - 18.
  • 8EUAN B, VOLKER N, DOMINIK W, et al. Direct compari- son of stylus and resonant methods {or determining Young's modulus of single and multilayer MEMS cantilevers[J]. Sen- sors and Actuators A= Physical,2011,172(2):440-446.
  • 9DANYLYUK S V, OTT R, PANAITOV G, et al. Alumin ium nitride-niobium multilayers and free standing structuresfor MEMS[J]. Thin Scl:d Films,2006,515(2):489-492.
  • 10YANG E H, YANG S S, YOO S H. A technique for quanti tative determination of the profile of the residual stress along the depth of p+ silicon films[J]. Applied Physics Letters, 1995,67:912-914.

引证文献5

二级引证文献21

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部