KrF准分子激光移相光刻在HEMT栅加工中的应用

KrF Excimer Laser Phase-shifting Lithography in HEMT Fabrication

将KrF准分子激光无铬接触式移相光刻应用于深亚微米HEMT栅图形加工，自行设计、组装了一套实验系统，很好地解决了这一器件制作的关键工艺问题。分别采用石英版移相和衬底移相方式，可重复可靠地得到剖面陡直的（0．30—0．35）μm和（0．2—0．25）μm胶阴线条，这一工艺技术完全与现有器件工艺技术兼容，为HEMT深亚微米栅加工提供了一个新的可供选择的方法，文中还从计算机模拟角度对上述两种移相光刻方式作了分析。

Chromeless phase-shifting lithography is adopted in HEMT gate pattern formation for its innate advantages of high resolution and high production efficiency. Photoresist patterns of (0. 3-0. 35) μm and (0. 2-0. 25 ) μm are achievedby means of phase-shifter on mask and on wafer,respectively. Both the simulationsand experiments show that the gap between the shifter and the substrate has asignificant influence on the line width of photoresist. A method making the shifterclosely contact to the substrate is proposed in this paper.