摘要
利用纳米硅薄膜中微晶粒的量子点（Ｑ．Ｄ）特征制成隧道二极管结构，在液氮温区（＜１００Ｋ）在其σＶ、ＩＶ及ＣＶ特性曲线上呈现出共振隧穿峰、库仑台阶和量子振荡现象。说明，对无序分布着的量子点阵列，只要其粒子尺寸足够小，同样会发生量子功能作用。估计了在室温范围呈现出这种量子功能作用的可能性。
Fine crystalline grains (3～6nm in size) of nano size crystalline silicon films (nc Si∶H) has been demonstrated structurally and electrically to be characterized by quantum dots (QD). The conductance of nc Si∶H films is shown a distinct small size effect,e.g., conductivity increases with the size of grains decreasing. A tunnel diode sample has been fabricated with thin nc Si:H film (about 20nm ), and the Coulomb staircase clearly appeared on its σ V and I V curves at liquid nitrogen temperature (77K). Analysis has been made to explain the experimental results and the calculation shows that the quantum effect can also be revealed even at room temperature, if the grain size in nc Si∶H films could be further controlled less than 2～3nm.
基金
国家自然科学基金
