Si基光电子学研究进展

The Progresses in The Study on Si based Optoelectronics

作为“第二代硅”，Ｓｉ基异质结材料为世人所嘱目，Ｓｉ基光电子器件及光电集成（ＯＥＩＣ）是当前世界范围的热门课题。本文综述Ｓｉ基异质材料的外延生长和特性、Ｓｉ基光电子器件的结构和性能及其应用，着重介绍ＳｉＧｅ／Ｓｉ的研究进展。

Si based heterostructure materials, as the second generation of Silicon, are more and more attractive, so Si based optoelectronic integrated circuits(OEIC) as well as Si based optoelectronic devices become the key research projects over the world. The investigations, including the epitaxy methods for Si based heterostructures and their characteristics, the structures of Si based optoelectronic devices and their performances, and applications were reviewed in the paper. The emphasis was placed on the recent progresses of the study on SiGe/Si heterostructures.