栅结漏电流对GaAs MMIC中平面肖特基二极管C-V特性的影响

Effects of the Gate Contact Leakage Current on C V Characteristics of the Planar Schottky Diodes in GaAs MMIC′s

构造了考虑栅结漏电流影响的平面肖特基二极管电容计算模型，并用此模型对同一结构不同漏电流的肖特基二极管作了计算分析。计算结果显示，所构造模型与实验结果符合得很好，同时揭示出栅结漏电流对Ｃ—Ｖ特性确有影响。这种影响表现为，在一定的栅压范围内，随着栅结漏电流的增大，Ｃ—Ｖ曲线明显上抬。文中还与其它未考虑栅结漏电流影响的模型作了对比。

A model for capacitance calculation is presented,in which the effects of gate contact leakage current is taken into account.Schottky diodes with the same structure but different leakages are analyzed with this model.It has been shown that the model proposed is in good agreement with the experimental results.It reveals that the leakage current does have effects on the C—V characteristics of Schottky diodes