超高亮度InGaAlP 590 nm LED管芯设计

Design of super-brightness InGaAlP 590 nm LED dice

根据发光波长、化合物半导体的能带隙和晶格常数三者的关系和实验数据，研究设计了ＩｎＧａＡｌＰ双异质结各层的ｘ，ｙ值组成、掺杂浓度、厚度等整个ＬＥＤ的管芯结构。这种新颖的ＧａＰ（电流扩散层）／ＩｎＧａＡｌＰ（双异质结）／ＧａＰ（衬底）管芯结构，对５９０ｎｍ峰值波长全透明，比ＧａＰ或ＧａＡｌＡｓ（电流扩散层）／ＩｎＧａＡｌＰ（双异质结）／ＧａＡｓ（衬底）管芯结构的出光率高出两倍，其外量子效率不小于６％。

Research and designs of the LED dice structure such as the compositions of x and y ,doping concentration,and thickness,etc for each layer of InGaAlP double heterostructure is demonstrated in terms of the dependence of emitting wavelength,bandgap of compound semiconductor,and lattice constant as well as the experimental data.The new structure of InGaAlP(DH)/GaP LED dice is transparent at peak wavelength of 590 nm,whose efficiency of light output is twice higher than that of GaAlAs/InGaAlP/GaAs LED dice,with the external quantum efficiency of ≥6% .