摘要
无源RFID标签芯片的能量来自读写器发射的射频能量。针对符合ISO/IEC15693标准的无源高频(13.56 MHz)RFID标签芯片,对NMOS栅交叉连接整流电路结构进行了研究与设计,实现的NMOS栅交叉连接整流电路的能量转换效率为34.46%,并设计一种低成本、低功耗的芯片工作电源产生电路,设计工艺采用SMIC 0.35μm 2P3M CMOS EEPROM工艺。最后,给出了芯片的测试结果。测试结果显示:所设计的电源产生电路能够很好地工作在ISO15693标准定义的最小磁场Hmin(150 mA/m)和最大磁场Hmax(5 A/m)之间。
Passive RFID tag IC is energized by an electromagnetic radio frequency wave transmitted by tag reader. A power generator for ISO/IEC 15693-compatible RFID transponder IC was presented. An NMOS gate crossconnected rectifier was designed and optimized, which achieved a power conversion efficiency of 34. 46%. The new power generator could satisfy the requirement of low cost and low power consumption. The ISO/IEC 15693-compatible RFID transponder IC was implemented in SMIC's 0.35 um three-metal two-poly mixed signal CMOS technology with embedded EEPROM. Experimental results showed that the power generator could operate over a wide range of electromagnetic field strength between Hmin (150 mA/m) and Hmax (5 A/m).
出处
《微电子学》
CAS
CSCD
北大核心
2009年第1期1-5,共5页
Microelectronics
基金
国家高技术研究发展计划基金资助项目(2006AA01Z226)