摘要
研究了不同剂量率下PMOS剂量计阈值电压的响应。在VTH偏置下,观察了剂量率对PMOS剂量计辐射响应线性度和灵敏度的影响规律及其退火特性。试验结果表明:随着剂量率降低,n值趋近于1,表现出较好的线性度,响应灵敏度也增加。分析认为,PMOS剂量计有明显的低剂量率辐射敏感增强效应(ELDRS),对其损伤机理作了进一步的讨论。
Response of threshold voltage shift of PMOSFET dosimeter was investigated at various dose rates. Based on Vth biased model, the dose-rate effects of PMOSFET dosimeter on the linearity and sensitivity and its annealing features were observed. Results showed that, as dose rate decreased, the n value tended towards 1, with better linearity and higher sensitivity, and that PMOSFET dosimeter obviously exhibited enhanced low-dose-rate sensitivity （ELDRS）. And damage mechanism of ELDRS was also discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第1期128-131,共4页
Microelectronics
